Coupling characteristics of thin-film metal-oxide-metal diodes at 10.6 μ
- 1 November 1975
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 27 (9) , 481-483
- https://doi.org/10.1063/1.88541
Abstract
Coherent coupling of 10.6‐μm radiation into high‐resistance photolithographically fabricated metal‐oxide‐metal tunnel junctions has been demonstrated in direct detection experiments.Keywords
This publication has 5 references indexed in Scilit:
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- ac electron tunneling at infrared frequencies: Thin-film M-O-M diode structure with broad-band characteristicsApplied Physics Letters, 1974
- IMPROVED COUPLING TO INFRARED WHISKER DIODES BY USE OF ANTENNA THEORYApplied Physics Letters, 1970
- Electric Tunnel Effect between Dissimilar Electrodes Separated by a Thin Insulating FilmJournal of Applied Physics, 1963