Spatial Distribution of SiH3 Radicals in RF Silane Plasma
- 1 March 1990
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 29 (3A) , L505-507
- https://doi.org/10.1143/jjap.29.l505
Abstract
Infrared diode laser absorption spectroscopy (IRLAS) was applied to the measurement of SiH3 in a RF silane P-CVD chamber with parallel plate electrodes. The spatial distribution of SiH3 radicals between the electrodes was measured to obtain the incident flux density of SiH3 to the electrode surface. The growth rate of a-Si:H was also measured in the same plasma. These data were used to estimate the contribution of SiH3 to a-Si:H thin-film growth.Keywords
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