The structure of SiO/sub 2/, its defects and radiation hardness
- 1 June 1994
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 41 (3) , 452-459
- https://doi.org/10.1109/23.299784
Abstract
No abstract availableThis publication has 20 references indexed in Scilit:
- Characterization and depth profiling of E′ defects in buried SiO2Journal of Applied Physics, 1993
- Hydrogen interactions with delocalized spin centers in buried SiO2 thin filmsApplied Physics Letters, 1993
- Post-irradiation cracking of H2 and formation of interface states in irradiated metal-oxide-semiconductor field-effect transistorsJournal of Applied Physics, 1993
- Self-trapped holes in amorphous silicon dioxidePhysical Review B, 1989
- A Comparison of the Structure of a-SiO2 Prepared by Different RoutesPublished by Springer Nature ,1988
- Oxygen vacancy and thecenter in crystallinePhysical Review B, 1987
- Irreversible and reversible annealing of paramagnetic oxygen vacancies (E′1 centers) in oxygen-implanted amorphous SiO2Journal of Applied Physics, 1984
- Paramagnetic trivalent silicon centers in gamma irradiated metal-oxide-silicon structuresApplied Physics Letters, 1984
- Electron−hole pair creation energy in SiO2Applied Physics Letters, 1975
- Oxygen vacancy model for the E1′ center in SiO2Solid State Communications, 1974