Effects of annealing conditions on optical and electrical characteristics of titanium dioxide films deposited by electron beam evaporation
- 15 March 2001
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 89 (6) , 3256-3269
- https://doi.org/10.1063/1.1349860
Abstract
No abstract availableThis publication has 42 references indexed in Scilit:
- Electrical characteristics of Ta2O5 thin films deposited by electron beam gun evaporationApplied Physics Letters, 1999
- Electrical characteristics of metal-dielectric-metal and metal-dielectric-semiconductor structures based on electron beam evaporated Y2O3, Ta2O5 and Al2O3 thin filmJournal of Applied Physics, 1998
- Tantalum pentoxide (Ta2O5) thin films for advanced dielectric applicationsMaterials Science and Engineering: R: Reports, 1998
- Interfacial reaction in the poly-Si/Ta2O5/TiN capacitor systemJournal of Applied Physics, 1998
- Synthesis of yttrium oxide thin films with and without the use of organic self-assembled monolayersApplied Physics Letters, 1997
- Detection of defect states responsible for leakage current in ultrathin tantalum pentoxide (Ta2O5) films by zero-bias thermally stimulated current spectroscopyApplied Physics Letters, 1997
- Leakage currents in amorphous Ta2O5 thin filmsJournal of Applied Physics, 1997
- Study of rf-sputtered yttrium oxide films on silicon by capacitance measurementsJournal of Applied Physics, 1995
- Electrical and optical properties of TiO2 anatase thin filmsJournal of Applied Physics, 1994
- Structural and electrical characteristics of metal-insulator-semiconductor diodes based on Y2O3 dielectric thin films on siliconJournal of Applied Physics, 1992