Transport properties of single-crystal tetracene field-effect transistors with silicon dioxide gate dielectric
- 14 July 2004
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 85 (3) , 422-424
- https://doi.org/10.1063/1.1771466
Abstract
No abstract availableKeywords
This publication has 21 references indexed in Scilit:
- Elastomeric Transistor Stamps: Reversible Probing of Charge Transport in Organic CrystalsScience, 2004
- Space charge limited transport and time of flight measurements in tetracene single crystals: A comparative studyJournal of Applied Physics, 2004
- Field-effect transistors on tetracene single crystalsApplied Physics Letters, 2003
- Field-induced charge transport at the surface of pentacene single crystals: A method to study charge dynamics of two-dimensional electron systems in organic crystalsJournal of Applied Physics, 2003
- Single-crystal organic field effect transistors with the hole mobility ∼8 cm2/V sApplied Physics Letters, 2003
- Identification of polymorphs of pentaceneSynthetic Metals, 2003
- Pentacene-based radio-frequency identification circuitryApplied Physics Letters, 2003
- Temperature-independent transport in high-mobility pentacene transistorsApplied Physics Letters, 1998
- High-field saturation of charge carrier drift velocities in ultrapurified organic photoconductorsSynthetic Metals, 1991
- Ultrapure, high mobility organic photoconductorsApplied Physics A, 1985