Thin film polycrystalline Si p-n junction solar cells with preferential doping
- 30 November 1982
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 25 (11) , 1111-1117
- https://doi.org/10.1016/0038-1101(82)90150-2
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Reduction of grain boundary recombination in polycrystalline silicon solar cellsApplied Physics Letters, 1977
- Performance limitations of silicon solar cellsIEEE Transactions on Electron Devices, 1977
- Efficiency calculations for thin-film polycrystalline semiconductor Schottky barrier solar cellsIEEE Transactions on Electron Devices, 1977
- Carrier generation-recombination in the space-charge region of an asymmetrical p-n junctionSolid-State Electronics, 1968