Chemical Stability of HF-Treated Si(111) Surfaces
- 1 December 1991
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 30 (12S) , 3567-3569
- https://doi.org/10.1143/jjap.30.3567
Abstract
Growth kinetics of native oxide on Si(111) surfaces treated in pH-modified buffered HF (BHF) solutions has been systematically studied by angle-resolved X-ray photoelectron spectroscopy. A BHF-etched (pH=5.3) Si(111) surface has no Si-F bonds and dose not oxidize for 300 min in clean room air. FT-IR-attenuated total reflection (ATR) measurements of Si-H bonds existing on the BHF-treated Si(111) surface have revealed that the surface is nearly step-free and atomically flat. This explains the chemical stability of the Si(111) surface.Keywords
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