The HgFET: a new characterization tool for SOI silicon film properties
- 22 November 2002
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 180-181
- https://doi.org/10.1109/soi.1997.634992
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Point-contact pseudo-MOSFET for in-situ characterization of as-grown silicon-on-insulator wafersIEEE Electron Device Letters, 1992
- New method for the extraction of MOSFET parametersElectronics Letters, 1988