Highly uniform characteristics 12-element 1.5 µmstrain-compensated AlGaInAs/InP laser arrays with low threshold current and high characteristic temperature
- 22 January 1998
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 34 (2) , 186-187
- https://doi.org/10.1049/el:19980211
Abstract
Highly uniform characteristic 12-element monolithic AlGaInAs/InP 1.5 µm strain-compensated multiquantum well ridge laser arrays with low threshold current and high characteristic temperature have been achieved. The array element exhibits a threshold current of 5.4 mA and a characteristic temperature of 90 K. Excellent uniformity, with standard deviations of 0.14 mA, 0.007 W/A, and 1.13 nm for threshold current, slope efficiency and lasing wavelength, respectively, were obtained.Keywords
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