Fast, accurate, on-wafer extraction of parasitic resistances and inductances in GaAs MESFETs and HEMTs
- 2 January 2003
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 7, 1011-1014
- https://doi.org/10.1109/mwsym.1992.188162
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Equivalent-circuit parameter extraction for cold GaAs MESFET'sIEEE Transactions on Microwave Theory and Techniques, 1991
- A gate probe method of determining parasitic resistance in MESFET'sIEEE Electron Device Letters, 1986
- New method to measure the source and drain resistance of the GaAs MESFETIEEE Electron Device Letters, 1986
- New method for determining the series resistances in a MESFET or TEGFETElectronics Letters, 1983