Quantitative mobility spectrum analysis of multicarrier conduction in semiconductors
- 15 January 1997
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 81 (2) , 709-713
- https://doi.org/10.1063/1.364211
Abstract
We demonstrate an optimized quantitative mobility spectrum analysis (QMSA) technique for determining free electron and hole densities and mobilities from magnetic-field-dependent Hall and resistivity data. The procedure is applied to an In1−xGaxAs–In1−xAlxAs single quantum well, GaAs–AlAs asymmetric double quantum wells, and Hg1−xCdxTe epitaxial thin films containing multiple carrier species. The results illustrate the reliability, versatility, and sensitivity of the analysis, which is fully computer automated following input of the magnetic-field-dependent data. QMSA is found to be a suitable standard tool for the routine electrical characterization of semiconductor material and device transport properties.This publication has 6 references indexed in Scilit:
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