Methods for magnetotransport characterization of IR detector materials
- 1 June 1993
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 8 (6S) , 805-823
- https://doi.org/10.1088/0268-1242/8/6s/004
Abstract
No abstract availableKeywords
This publication has 100 references indexed in Scilit:
- Influence of localization on the Hall effect in narrow-gap, bulk semiconductorsPhysical Review B, 1990
- Far-infrared magneto-optical study of holes and electrons in zero-band-gap HgTe/Te superlatticesPhysical Review B, 1990
- Variable magnetic field Hall effect measurements and analyses of high purity, Hg vacancy (p-type) HgCdTeJournal of Vacuum Science & Technology A, 1986
- Electrical properties of shallow levels in p-type HgCdTeJournal of Applied Physics, 1986
- Sims analysis of impurities at CMT/CdTe heterostructure interfacesMaterials Letters, 1984
- Theory for electron mobilities in n‐type Hg1−xCdxTe and CdTe at low temperaturesJournal of Vacuum Science and Technology, 1982
- Galvanomagnetic Properties of HgTe in High Magnetic FieldPhysica Status Solidi (b), 1972
- Electron Mobility in Hg1−xCdxTeJournal of Applied Physics, 1972
- Calculation of Ionized-Impurity Scattering Mobility of Electrons inPhysical Review B, 1968
- Behandlung von Nichtgleichgewichtsvorgängen mit Hilfe eines ExtremalprinzipsThe European Physical Journal A, 1948