Influence of localization on the Hall effect in narrow-gap, bulk semiconductors
- 15 April 1990
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 41 (11) , 7922-7925
- https://doi.org/10.1103/physrevb.41.7922
Abstract
No abstract availableThis publication has 11 references indexed in Scilit:
- Magnetophonon effect inTePhysical Review B, 1987
- Possible States for a Three-Dimensional Electron Gas in a Strong Magnetic FieldJapanese Journal of Applied Physics, 1987
- Observation of Impurity Cyclotron Resonance inPhysical Review Letters, 1986
- Landau-Level-Electron Lifetimes in-InSbPhysical Review Letters, 1978
- De Haas - Van Alphen and Shubnikov - De Haas Effect in n-HgSe in Strong Magnetic FieldsPhysica Status Solidi (b), 1969
- Quantum theory of thermogalvanomagnetic phenomena (TGMP) in conductors with equal concentration of electrons and holesPhysica Status Solidi (b), 1968
- Low-Temperature Transport Effects in-Type GaSb at High Magnetic FieldsPhysical Review B, 1967
- De Haas-Shubnikov effect in In Sb with high electron concentrationsPhysics Letters, 1966
- Quantum theory of transverse galvano-magnetic phenomenaJournal of Physics and Chemistry of Solids, 1959
- Infrared Resonant Absorption from Bound Landau Levels in InSbPhysical Review B, 1957