GaAlAs Schottky directional-coupler switch
- 15 December 1977
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 31 (12) , 836-838
- https://doi.org/10.1063/1.89567
Abstract
Electro‐optic metal‐gap directional‐coupler switches have been fabricated in GaAlAs waveguide structures. A very thin GaAs cap facilitates the electroplating of Schottky barriers without significantly increasing the optical attenuation at wavelengths near 8600 Å, making this type of device suitable for integration with a GaAs laser source on a common chip. The performance of the switch was investigated at 1.06 m. A 17‐dB extinction ratio in the coupled channel was measured at a reverse‐bias voltage of 25 V.Keywords
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