Defect Structures in InP Crystals by Laser Scanning Tomography
- 1 August 1987
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 26 (8A) , L1255-1257
- https://doi.org/10.1143/jjap.26.l1255
Abstract
Laser-beam scanning tomography images are taken from various InP crystals. They all display a distribution of bright points which are shown to be statistically arranged along the crystallographic axes and . These microdefects are likely distributed along dislocations in such a way that small volumes or “cells” (typically 200-500 µm wide) are kept free from defects. It is shown that the density of defects varies with the doping of the material; lower densities were observed in Fe-doped InP crystals.Keywords
This publication has 3 references indexed in Scilit:
- Direct observation of the principal deep level (EL2) in undoped semi-insulating GaAsApplied Physics Letters, 1983
- Observation of Lattice Defects in GaAs and Heat-treated Si Crystals by Infrared Light Scattering TomographyJapanese Journal of Applied Physics, 1983
- Direct Observation of Dislocations in a LEC-GaP Crystal by Light Scattering MethodJapanese Journal of Applied Physics, 1976