Observation of Lattice Defects in GaAs and Heat-treated Si Crystals by Infrared Light Scattering Tomography
- 1 April 1983
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 22 (4A) , L207-209
- https://doi.org/10.1143/jjap.22.l207
Abstract
Most semiconductor crystals are transparent for infrared rays but some of them are difficult to study by X-ray methods if they are composed of heavy elements. An infrared light scattering tomography, which is developed in this paper to characterize semiconductor crystals, successfully gives clear images of micro-defects in a heat-treated Si crystal and dislocation networks in a GaAs crystal grown by a horizontal Bridgman method.Keywords
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