Nonpolymer new organic film for local insulation in laser-direct-writing circuit restructuring for large-scale integrated circuits

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Abstract
A new nonpolymer organic material, hexaacetate p‐methylcalix [6] arene (hereafter referred to as MC6AOAc), has been successfully applied to the localized insulator for large‐scale integration (LSI) circuit restructuring. A conductive line, necessary for the restructuring, was written on the MC6AOAc film by laser chemical vapor deposition with no damage to the film. The leakage current through the film was kept within the permissible limit. The unnecessary part of the film for LSI testing was easily removed by an ethanol rinse without damage to the interconnection, in a self‐aligned manner, with the written line as a mask. This technology extends the usability of the LSI circuit restructuring.