An inductor-based 52-GHz 0.18 μm SiGe HBT cascode LNA with 22 dB gain

Publisher Website

22 November 2004

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

https://doi.org/10.1109/esscir.2004.1356674

Abstract

No abstract available

Keywords

This publication has 4 references indexed in Scilit:

Si-based inductors and transformers for 30-100 GHz applications
Published by Institute of Electrical and Electronics Engineers (IEEE) ,2004
SiGe BiCMOS technology for communication products
Published by Institute of Electrical and Electronics Engineers (IEEE) ,2004
Millimeter-wave VCOs with wide tuning range and low phase noise, fully integrated in a SiGe bipolar production technology
IEEE Journal of Solid-State Circuits, 2003
A scalable high-frequency noise model for bipolar transistors with application to optimal transistor sizing for low-noise amplifier design
IEEE Journal of Solid-State Circuits, 1997