A scalable high-frequency noise model for bipolar transistors with application to optimal transistor sizing for low-noise amplifier design
- 1 September 1997
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 32 (9) , 1430-1439
- https://doi.org/10.1109/4.628757
Abstract
Fully scalable, analytical HF noise parameter equations for bipolar transistors are presented and experimentally tested on high-speed Si and SiGe technologies. A technique for extracting the complete set of transistor noise parameters from Y parameter measurements only is developed and verified. Finally, the noise equations are coupled with scalable variants of the HICUM and SPICE-Gummel-Poon models and are employed in the design of tuned low noise amplifiers (LNA's) in the 1.9-, 2.4-,and 5.8-GHz bands.Keywords
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