Extraction of the InP/GaInAs heterojunction bipolar transistor small-signal equivalent circuit
- 1 June 1995
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 42 (6) , 1059-1064
- https://doi.org/10.1109/16.387237
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- A parameter extraction technique for heterojunction bipolar transistorsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Role of hot electron base transport in abrupt emitter InP/Ga0.43In0.53As heterojunction bipolar transistorsApplied Physics Letters, 1994
- Evaluation of the factors determining HBT high-frequency performance by direct analysis of S-parameter dataIEEE Transactions on Microwave Theory and Techniques, 1992
- A 144 GHz InP/InGaAs composite collector heterostructure bipolar transistorPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1992
- Direct extraction of the AlGaAs/GaAs heterojunction bipolar transistor small-signal equivalent circuitIEEE Transactions on Electron Devices, 1991