A 144 GHz InP/InGaAs composite collector heterostructure bipolar transistor
- 1 January 1992
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
We describe a composite collector InP/InGaAs heterostructure bipolar transistor with f/sub T/=144 GHz and f/sub max/=81 GHz. The breakdown voltage BV/sub CEO/ is greater than 5V and output conductance is essentially independent of the collector voltage. This combination of performance characteristics is obtained with a carefully optimized collector structure. A monolithic transimpedance amplifier based on composite collector transistors has a bandwidth of 28 GHz and gain of 40 dB Omega . A hybrid optical receiver constructed with these amplifiers has open eye diagrams at 32 Gbit/s and a 1*10/sup -9/ error rate with -23.7 dBm of incident power.Keywords
This publication has 9 references indexed in Scilit:
- Microwave performance of InGaAs/InP composite collector bipolar transistorsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Simulation of multiply connected current-voltage characteristics in charge injection transistorsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Bistable hot electron transport in InP/GaInAs composite collector heterojunction bipolar transistorsApplied Physics Letters, 1992
- Anomalous electric field and temperature dependence of collector multiplication in InP/Ga0.47In0.53As heterojunction bipolar transistorsApplied Physics Letters, 1992
- InGaAs/InP composite collector heterostructure bipolar transistorsElectronics Letters, 1992
- A 28 GHz transimpedance preamplifier with inductive bandwidth enhancementPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1992
- Ultrahigh Be doping of Ga0.47In0.53As by low-temperature molecular beam epitaxyApplied Physics Letters, 1989
- A possible near-ballistic collection in an AlGaAs/GaAs HBT with a modified collector structureIEEE Transactions on Electron Devices, 1988
- An investigation of steady-state velocity overshoot in siliconSolid-State Electronics, 1985