5.8 GHz and 12.6 GHz Si bipolar MMICs
- 22 November 2002
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 372-373,
- https://doi.org/10.1109/isscc.1997.585436
Abstract
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This publication has 2 references indexed in Scilit:
- A scalable high frequency noise model for bipolar transistors with application to optimal transistor sizing for low-noise amplifier designPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Modeling, characterization and design of monolithic inductors for silicon RFICsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002