A scalable high frequency noise model for bipolar transistors with application to optimal transistor sizing for low-noise amplifier design
- 24 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- SiGe HBT technology: device and application issuesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Predictive modelling of lateral scaling in bipolar transistorsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- A 1.9-GHz GaAs chip set for the personal handyphone systemIEEE Transactions on Microwave Theory and Techniques, 1995
- A Novel Approach to HF-Noise Characterization of Heterojunction Bipolar TransistorsPublished by Springer Nature ,1995
- A compact bipolar transistor model for very-high-frequency applications with special regard to narrow emitter stripes and high current densitiesSolid-State Electronics, 1993
- A new method for on wafer noise measurementIEEE Transactions on Microwave Theory and Techniques, 1993