Predictive modelling of lateral scaling in bipolar transistors

This publication has 10 references indexed in Scilit:

• Transit time of high-speed bipolar transistors in dependence on operating point, technological parameters, and temperature
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,2003
• Si/SiGe epitaxial-base transistors. I. Materials, physics, and circuits
  IEEE Transactions on Electron Devices, 1995
• A compact bipolar transistor model for very-high-frequency applications with special regard to narrow emitter stripes and high current densities
  Solid-State Electronics, 1993
• TRANSIENT AND SMALL‐SIGNAL HIGH‐FREQUENCY SIMULATION OF NUMERICAL DEVICE MODELS EMBEDDED IN AN EXTERNAL CIRCUIT
  COMPEL: The International Journal for Computation and Mathematics in Electrical and Electronic Engineering, 1991
• Simulation and modeling of the low-frequency base resistance of bipolar transistors and its dependence on current and geometry
  IEEE Transactions on Electron Devices, 1991
• Multi-gigabit-per-second silicon bipolar ICs for future optical-fiber transmission systems
  IEEE Journal of Solid-State Circuits, 1988
• A compact physical large-signal model for high-speed bipolar transistors at high current densities—Part II: Two-dimensional model and experimental results
  IEEE Transactions on Electron Devices, 1987
• A simple method for separation of the internal and external (peripheral) currents of bipolar transistors
  Solid-State Electronics, 1984
• High current regimes in transistor collector regions
  IEEE Transactions on Electron Devices, 1973
• Current gain and cutoff frequency falloff at high currents
  IEEE Transactions on Electron Devices, 1969