Simulation and modeling of the low-frequency base resistance of bipolar transistors and its dependence on current and geometry
- 1 March 1991
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 38 (3) , 538-544
- https://doi.org/10.1109/16.75164
Abstract
No abstract availableKeywords
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