Current crowding on metal contacts to planar devices
- 1 December 1969
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 16 (12) , 1022-1024
- https://doi.org/10.1109/t-ed.1969.16904
Abstract
A simple transmission line model is applied to the contact region between metal and diffusion layer in planar devices. Taking into account the sheet resistance of the diffusion layer and an ohmic specific contact resistance between metal and semiconductor the theoretical current distribution across the contact is calculated and compared with the results obtained with a model suggested by Kennedy and Murley. Experimental data are given that confirm the validity of the transmission line model.Keywords
This publication has 4 references indexed in Scilit:
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- Contact resistance on diffused resistorsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1969
- Evaluation of the interfacial resistance of thin film interconnexionsMicroelectronics Reliability, 1968
- A Two-Dimensional Mathematical Analysis of the Diffused Semiconductor ResistorIBM Journal of Research and Development, 1968