Noise,resolution and entropy in sputter profiling
- 15 November 1996
- journal article
- Published by The Royal Society in Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences
- Vol. 354 (1719) , 2713-2729
- https://doi.org/10.1098/rsta.1996.0125
Abstract
No abstract availableThis publication has 22 references indexed in Scilit:
- Secondary ion mass spectroscopy resolution with ultra-low beam energiesJournal of Vacuum Science & Technology A, 1996
- Two-dimensional profiling of large tilt angle, low energy boron implanted structure using secondary-ion mass spectrometryJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1996
- Use of maximum entropy deconvolution for the study of silicon delta layers in GaAsJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1996
- Experimental investigation of the increase in depth resolution obtained through the use of maximum entropy deconvolution of secondary ion mass spectrometry depth profilesJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1996
- Secondary ion mass spectrometry analysis of ultrathin impurity layers in semiconductors and their use in quantification, instrumental assessment, and fundamental measurementsJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1994
- SIMS Profile quantification by maximum entropy deconvolutionSurface and Interface Analysis, 1993
- SIMS profile simulation using delta function distributionsSurface and Interface Analysis, 1991
- Reliability of the diffusion approximation for the ballistic relocation function in atomic mixing by ion beamsJournal of Applied Physics, 1988
- Profile distortion in SIMSSpectrochimica Acta Part B: Atomic Spectroscopy, 1984
- The depth resolution of sputter profilingApplied Physics A, 1979