Hydrogen passivation of donors and acceptors in InP
- 1 November 1989
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 4 (11) , 947-950
- https://doi.org/10.1088/0268-1242/4/11/008
Abstract
Hydrogen passivation of shallow donors and acceptors in n- and p-type InP is demonstrated. The process is more efficient in p-type material implying hydrogen in InP to be a deep donor as in Si. Other accompanying effects such as photoluminescence intensity increase and improvements in I-V characteristics are also reported.Keywords
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