Activated carrier density profile and scattering rate measurements of implanted and annealed silicon using infrared attenuated total reflection
- 20 October 1986
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 49 (16) , 1031-1033
- https://doi.org/10.1063/1.97462
Abstract
A nondestructive infrared attenuated total reflection technique for measuring activated carrier density profiles and elastic scattering rates of ion implanted and annealed semiconductor wafers is described. The results obtained using this technique on annealed B and BF2 implanted Si wafers are presented and compared with the respective secondary ion mass spectroscopy and spreading resistance profiles.Keywords
This publication has 3 references indexed in Scilit:
- Electrical and structural characterization of implantation doped silicon by infrared reflectionRadiation Effects, 1982
- Characterization of phosphorous doped silicon by infrared reflectivityAIP Conference Proceedings, 1978
- Excitation of nonradiative surface plasma waves in silver by the method of frustrated total reflectionThe European Physical Journal A, 1968