Quantitative voltage-dependent STM image simulations for semiconductors
- 31 July 1992
- journal article
- Published by Elsevier in Ultramicroscopy
- Vol. 42-44, 801-808
- https://doi.org/10.1016/0304-3991(92)90361-m
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Structure of Si(113) determined by scanning tunneling microscopyPhysical Review Letters, 1991
- Voltage-dependent scanning tunneling microscopy imaging of semiconductor surfacesJournal of Vacuum Science & Technology A, 1988
- Self-consistent electronic structure of semi-infinite Si(001) (2×1) and Ge(001) (2×1) with model calculations for scanning tunneling microscopyJournal of Vacuum Science & Technology B, 1987
- Scanning tunneling microscopy of Si(001)Physical Review B, 1986
- Computer simulation of local order in condensed phases of siliconPhysical Review B, 1985
- Voltage-dependent scanning-tunneling microscopy of a crystal surface: GraphitePhysical Review B, 1985
- Theory of the scanning tunneling microscopePhysical Review B, 1985
- Theoretical study of the atomic structure of silicon (211), (311), and (331) surfacesPhysical Review B, 1984
- 7 × 7 Reconstruction on Si(111) Resolved in Real SpacePhysical Review Letters, 1983
- Electric Tunnel Effect between Dissimilar Electrodes Separated by a Thin Insulating FilmJournal of Applied Physics, 1963