Atomic-displacement mechanism in ion-bombarded semiconductors and insulators
- 1 May 1975
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 26 (9) , 499-501
- https://doi.org/10.1063/1.88233
Abstract
A two‐stage process of atomic displacement involving both elastic and inelastic energy transfer is presented, in order to account for the number and distribution of primary defects in ion‐bombarded semiconductors and insulators. Some experimental tests are proposed.Keywords
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