Abstract
The films were deposited by a novel technique: getter sputtering in helium gas with liquid helium circulating through the copper-substrate table. The resulting films were amorphous, had a high resistivity (a few 104 Ωcm), and a Curie temperature ranging between 420 and 500°K, which is in good agreement with a previous prediction (540°K) obtained on amorphous Ag-Ni films. Upon annealing the films recrystallize and regain the crystal structure, the resistivity (8 μΩcm) and the Curie temperature (630°K) of crystalline nickel.