Amorphous nickel films getter sputtered at 25°K
- 15 February 1978
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 17 (4) , 1908-1912
- https://doi.org/10.1103/physrevb.17.1908
Abstract
The films were deposited by a novel technique: getter sputtering in helium gas with liquid helium circulating through the copper-substrate table. The resulting films were amorphous, had a high resistivity (a few Ωcm), and a Curie temperature ranging between 420 and 500°K, which is in good agreement with a previous prediction (540°K) obtained on amorphous Ag-Ni films. Upon annealing the films recrystallize and regain the crystal structure, the resistivity (8 μΩcm) and the Curie temperature (630°K) of crystalline nickel.
Keywords
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