8 × 8 GaN Schottky barrier photodiode arrayfor visible-blind imaging
- 27 March 1997
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 33 (7) , 633-634
- https://doi.org/10.1049/el:19970377
Abstract
The fabrication and characterisation of an 8 × 8 Schottky barrier photodiode array on GaN, with pixel size of 200 × 200 µm, are reported. This array shows an average peak response of 0.05 A/W and sharp cutoff at 360 nm. Decay time measurements reveal the response to be RC-limited with a time constant of 50 ns. The visible-blind UV-imaging capability of the GaN photodiode array is also demonstrated for the first time.Keywords
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