Range and straggle of boron in photoresist
- 29 February 1972
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 15 (2) , 239-243
- https://doi.org/10.1016/0038-1101(72)90057-3
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- CHANNELING STUDY OF BORON-IMPLANTED SILICONApplied Physics Letters, 1970
- SB-IGFET, II: An ion implanted IGFET using Schottky barriersProceedings of the IEEE, 1969
- MOS field effect transistors formed by gate masked ion implantationIEEE Transactions on Electron Devices, 1968
- STOPPING CROSS SECTIONS IN CARBON FOR LOW-ENERGY ATOMS WITHCanadian Journal of Physics, 1963
- Theory of an Experiment for Measuring the Mobility and Density of Carriers in the Space-Charge Region of a Semiconductor SurfacePhysical Review B, 1958