Oriented aluminum nitride thin films deposited by pulsed-laser ablation
- 1 September 1991
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 70 (5) , 2871-2873
- https://doi.org/10.1063/1.349352
Abstract
Single-phase aluminum nitride thin films with preferred crystallographic orientations have been grown on single-crystal sapphire by pulsed-laser ablation. The orientation of the films was found to be determined by the atmosphere and the nitrogen pressure during deposition and the substrate temperature. The films were examined by x-ray diffraction, and scanning electron microscopy.This publication has 9 references indexed in Scilit:
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