Laser-induced chemical vapor deposition of AlN films

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Abstract
AlN intended for metal‐insulator‐semiconductor applications has been prepared by laser activated chemical vapor deposition from ammonia and trimethylaluminum precursors. The films are high‐density polycrystalline with 〈100〉 preferential orientation, and there is no evidence of the presence of Al2O3. A consistent band gap of 6.00±0.03 eV is obtained for film thickness in the range 0.3–1.2 μm. Conductivity is below 5×10−14 Ω−1 cm−1 at room temperature and is thermally activated with a range of excitation energies between 0.6 and 0.8 eV. The breakdown electric field is about 3×106 V/cm, while the relative permittivity varies between 7.8 and 8.2 in the frequency range 100 Hz–13 MHz.