Charge trapping characteristics of the interface states in an AlN/GaAs metal‐insulator‐semiconductor structure

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Abstract
Charge trapping properties of the interface states present at the AlN/n‐GaAs interfaces are investigated through high‐frequency capacitance transients. They change their behavior from electron to hole traps with the excursion of surface Fermi level towards the valence band. This observation indicates that it is ionization of the states near midgap, not the hole inversion, which blocks the downward excursion of surface potential in GaAs/ insulator systems. It is also found that these states are well defined in terms of having a single capture cross section within the energy range probed, and furthermore, they are spatially localized at the interface.