Between explosive crystallization and amorphous regrowth: Inhomogeneous solidification upon pulsed-laser annealing of amorphous silicon
- 2 March 1987
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 50 (9) , 507-509
- https://doi.org/10.1063/1.98142
Abstract
Si amorphized by Cu implantation has been irradiated by spatially uniform pulses of 7.5 ns duration from a frequency-doubled neodymium:yttrium aluminum garnet laser. After irradiation the samples were examined by cross-section transmission electron microscopy. A laterally random pattern of polycrystalline Si patches was found imbedded in amorphous material. At low-energy densities a considerable fraction of the regrown Si was polycrystalline. With increasing energy density the amount of polycrystalline Si decreased, both at the surface and in total. These results are discussed in terms of the time available for the nucleation of polycrystalline Si at a liquid-solid interface and the temperature profile in both the liquid and the solid material.Keywords
This publication has 14 references indexed in Scilit:
- Direct measurements of the velocity and thickness of ‘‘explosively’’ propagating buried molten layers in amorphous siliconApplied Physics Letters, 1986
- Time-resolved investigation of large-area explosive crystallization of amorphous silicon layersPhysica Status Solidi (a), 1985
- Undercooling of molten siliconApplied Physics Letters, 1985
- Pulsed excimer (KrF) laser melting of amorphous and crystalline silicon layersJournal of Applied Physics, 1985
- Evidence for a Self-Propagating Melt in Amorphous Silicon upon Pulsed-Laser IrradiationPhysical Review Letters, 1984
- Phase transformation and impurity redistribution during pulsed laser irradiation of amorphous silicon layersJournal of Applied Physics, 1984
- Melting Temperature and Explosive Crystallization of Amorphous Silicon during Pulsed Laser IrradiationPhysical Review Letters, 1984
- Bulk nucleation and amorphous phase formation in highly undercooled molten siliconApplied Physics Letters, 1984
- Pulsed laser melting of amorphous silicon layersApplied Physics Letters, 1984
- Ultrarapid crystal growth and impurity segregation in amorphous silicon annealed with short Q-switched laser pulsesApplied Physics Letters, 1982