Time-resolved investigation of large-area explosive crystallization of amorphous silicon layers
- 16 December 1985
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 92 (2) , 413-420
- https://doi.org/10.1002/pssa.2210920210
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- Photoacoustic measurements of ion-implanted semiconductorsIl Nuovo Cimento D, 1982
- Thermal Oxidation of Silicon: In Situ Measurement of the Growth Rate Using EllipsometryJournal of the Electrochemical Society, 1975