Photoacoustic measurements of ion-implanted semiconductors
- 1 March 1982
- journal article
- Published by Springer Nature in Il Nuovo Cimento D
- Vol. 1 (2) , 129-140
- https://doi.org/10.1007/bf02450073
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Extension of the Rosencwaig-Gersho photoacoustic spectroscopy theory to include effects of a sample coatingJournal of Applied Physics, 1980
- Phase measurements in the frequency domain photoacoustic spectroscopy of solidsJournal of Applied Physics, 1979
- Size considerations in the design of cells for photoacoustic spectroscopyJournal of Applied Physics, 1977
- Theory of the photoacoustic effect with solidsJournal of Applied Physics, 1976
- Photoacoustic Spectroscopy: New Uses for an Old TechniqueScience, 1975
- Thin-layer chromatography and photoacoustic spectrometryAnalytical Chemistry, 1975
- Photoacoustic Spectroscopy of Biological MaterialsScience, 1973
- Photoacoustic spectroscopy of solidsOptics Communications, 1973
- Ion implantation in semiconductors—Part II: Damage production and annealingProceedings of the IEEE, 1972
- Ion implantation in semiconductors—Part I: Range distribution theory and experimentsProceedings of the IEEE, 1968