Pulse Laser Induced High-Temperature Solid-Phase Annealing of Arsenic Implanted Silicon
- 16 September 1982
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 73 (1) , 145-151
- https://doi.org/10.1002/pssa.2210730118
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- Influence of 16O, 12C, 14N, and noble gases on the crystallization of amorphous Si layersJournal of Applied Physics, 1977
- Reordering of amorphous layers of Si implanted with 31P, 75As, and 11B ionsJournal of Applied Physics, 1977