Effects of thermal annealing on the refractive index of amorphous silicon produced by ion implantation
- 15 January 1982
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 40 (2) , 172-174
- https://doi.org/10.1063/1.93032
Abstract
Precise infrared reflection measurements of the refractive index of silicon show that there are two well-defined optical states of amorphous silicon produced by ion implantation. One is the as-implanted amorphous state which is the high refractive index state produced by high fluence implantation of Si or P ions into Si samples. The other state, which has a refractive index intermediate between the as-implanted and crystalline values, is induced by thermal annealing and is thermally stable until epitaxial recrystallization occurs.Keywords
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