Plasma region in high-fluence implants of phosphorus in amorphized silicon
- 1 May 1979
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 50 (5) , 3775-3777
- https://doi.org/10.1063/1.326293
Abstract
Phosphorus ions were implanted into silicon previously made amorphous by implantation with neon ions of projected range considerably greater than that of the P+ ions. Comparison of the annealing behavior for this case with that for P+‐only implants indicates that free‐carrier plasma formation in the region of high phosphorus concentration does not occur until the material has recrystallized.This publication has 6 references indexed in Scilit:
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