Influence of ion implantation on the optical properties of silicon
- 1 January 1980
- journal article
- research article
- Published by Taylor & Francis in Radiation Effects
- Vol. 49 (1) , 137-140
- https://doi.org/10.1080/00337578008243082
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Effect of irradiation temperature on Si amorphization processRadiation Effects, 1975
- On silicon amorphization during different mass ion implantationRadiation Effects, 1973
- Ion implantation in semiconductors—Part II: Damage production and annealingProceedings of the IEEE, 1972
- Nucleation of damage centres during ion implantation of siliconRadiation Effects, 1971
- Structural, Optical, and Electrical Properties of Amorphous Silicon FilmsPhysical Review B, 1970
- Infrared studies of the crystallinity of ion-implanted SiRadiation Effects, 1970
- Evidence for vacancy motion in low temperature ion-planted SiRadiation Effects, 1970
- A model for the formation of amorphous Si by ion bombardmentRadiation Effects, 1970