Monolithic optoelectronic integration of a GaAlAs laser, a field-effect transistor, and a photodiode

15 May 1984

journal article
Published by AIP Publishing in Applied Physics Letters

Vol. 44 (10) , 941-943
https://doi.org/10.1063/1.94598

Abstract

A low threshold buried heterostructure laser, a metal-semiconductor field-effect transistor, and a p-i-n photodiode have been integrated on a semi-insulating GaAs substrate. The circuit was operated as a rudimentary optical repeater. The gain bandwidth product of the repeater was measured to be 178 MHz.

Keywords

This publication has 3 references indexed in Scilit:

High-speed GaAlAs/GaAs p-i-n photodiode on a semi-insulating GaAs substrate
Applied Physics Letters, 1983
Solid state: Integrated optoelectronics: The marriage of lasers, detectors, and transistors in a single monolithic package promises fact, reliable data transmission
IEEE Spectrum, 1982
High Speed Photoresponse Mechanism of a GaAs-MESFET
Japanese Journal of Applied Physics, 1980