Phonon shifts in ion bombarded GaAs: Raman measurements

This publication has 25 references indexed in Scilit:

• The one phonon Raman spectrum in microcrystalline silicon
  Published by Elsevier ,2002
• MeV ion damage in III–V semiconductors: Saturation and thermal annealing of strain in GaAs and GaP crystals
  Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1986
• MeV ion damage in GaAs single crystals: Strain saturation and role of nuclear and electronic collisions in defect production
  Physical Review B, 1986
• Irradiation-induced defects in GaAs
  Journal of Physics C: Solid State Physics, 1985
• Raman Scattering in Alloy Semiconductors: "Spatial Correlation" Model
  Physical Review Letters, 1984
• Effects of As+ ion implantation on the Raman spectra of GaAs: ‘‘Spatial correlation’’ interpretation
  Applied Physics Letters, 1984
• Strain/Damage in Crystalline Materials Bombarded by MeV Ions: Recrystallization of GaAs by High-Dose Irradiation
  MRS Proceedings, 1984
• Adiabatic bond charge model for the phonons in A3B5 semiconductors
  Solid State Communications, 1976
• The optical and electrical effects of high concentrations of defects in irradiated crystalline gallium arsenide
  Advances in Physics, 1975
• Crystal Dynamics of Gallium Arsenide
  Physical Review B, 1963