MeV ion damage in III–V semiconductors: Saturation and thermal annealing of strain in GaAs and GaP crystals
- 1 May 1986
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 16 (1) , 44-49
- https://doi.org/10.1016/0168-583x(86)90225-9
Abstract
No abstract availableThis publication has 11 references indexed in Scilit:
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