110-GHz monolithic resonant-tunneling-diode trigger circuit
- 1 September 1991
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 12 (9) , 480-482
- https://doi.org/10.1109/55.116924
Abstract
The design and fabrication of a novel resonant tunneling diode (RTD) structure to be used in a monolithically integrated trigger circuit are reported. The structure has been designed to have high peak current densities with relatively low resonant voltages. These devices have been monolithically integrated with resistors to build a high-frequency trigger circuit. Experiments demonstrated triggering performance up to 110 GHz with subpicosecond timing jitter.Keywords
This publication has 4 references indexed in Scilit:
- Pulse forming and triggering using resonant tunnelung diode structuresElectronics Letters, 1990
- Fabrication of 200-GHz f/sub max/ resonant-tunneling diodes for integration circuit and microwave applicationsIEEE Electron Device Letters, 1989
- Resonant tunneling diodes for switching applicationsApplied Physics Letters, 1989
- Wigner-function model of a resonant-tunneling semiconductor devicePhysical Review B, 1987