Fabrication of 200-GHz f/sub max/ resonant-tunneling diodes for integration circuit and microwave applications
- 1 March 1989
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 10 (3) , 104-106
- https://doi.org/10.1109/55.31683
Abstract
Room-temperature current densities of 1.3*10/sup 5/ A/cm/sup 2/ and peak-to-valley ratios of 2.5 have been achieved for resonant tunneling diodes (RTDs) in the GaAs/AlAs material system. The devices were fabricated in a microwave-compatible process using topside contacts and a semi-insulating substrate to allow device integration. Proton implantation creates a nonconducting surface compatible with high-frequency coplanar transmission lines and other passive microwave structures.Keywords
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