Band-gap shift in CdS semiconductor by photoacoustic spectroscopy: Evidence of a cubic to hexagonal lattice transition

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Abstract
The band-gap energies of the CdS semiconductor are obtained by a photoacoustic spectroscopy (PAS) technique over a range of temperature of thermal annealing (TTA), in which the evolution of the sample structure is characterized by x-ray diffraction patterns. The PAS experiment gives a set of data for the band-gap shift in the region of the fundamental absorption edge. With increasing TTA the band-gap shift increases up to a critical TTA when its slope decreases in a roughly symmetrical way. It is suggested that at this temperature a cubic to hexagonal-lattice transition occurs.